Multi-level memory-switching properties of a single brain microtubule Author: Satyajit Sahu1, Subrata Ghosh 1, Kazuto Hirata 2, Daisuke Fujita 1, and Anirban Bandyopadhyay 1 Affiliation: 1Advanced Nano Characterization Center, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan 2Superconducting Materials Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan Conference/Journal: Applied Physics Letters Date published: 2013 Other: Volume ID: 102 , Pages: 123701 , Special Notes: http://dx.doi.org/10.1063/1.4793995 , Word Count: 96 We demonstrate that a single brain-neuron-extracted microtubule is a memory-switching element, whose hysteresis loss is nearly zero. Our study shows how a memory-state forms in the nanowire and how its protein arrangement symmetry is related to the conducting-state written in the device, thus, enabling it to store and process ∼500 distinct bits, with 2 pA resolution between 1 nA and 1 pA. Its random access memory is an analogue of flash memory switch used in a computer chip. Using scanning tunneling microscope imaging, we demonstrate how single proteins behave inside the nanowire when this 3.5 billion years old nanowire processes memory-bits.